PART |
Description |
Maker |
S29WS256N0LBAI010 S29WS256N0PBFI013 S29WS064N0LBAW |
Replaced by PTB78520W : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 Replaced by PTB48510C : 16M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 3.3Vout 30W 48V-Input Isolated DC-DC Converter 19-SIP MODULE -40 to 85 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 Replaced by PTB48560A : 25-WATT TRIPLE OUTPUT 48V-INPUT ISOLATED DC/DC CONVERTER FOR DSL 20-SIP MODULE 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA80 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪 Replaced by PTB48560C : 9V 30 Watt 48V-Input Isolated DC/DC Converter 19-SIP MODULE 8M X 16 FLASH 1.8V PROM, 70 ns, PBGA84 LED SMT_ULED4 MICROLED RED/GREEN FOR USE WITH OPTOPIPE
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Spansion, Inc. Spansion Inc.
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AM29BDS640HD9VMI BS640HD9V |
128 or 64 Megabit (8 M or 4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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Advanced Micro Devices
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S29WSXXXN S29WS064N0LBAI010 S29WS064N0LBAI012 S29W |
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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SPANSION[SPANSION]
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S29WS128J S29WS064J |
From old datasheet system 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
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SPANSION[SPANSION]
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S29NS256N |
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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SPANSION
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AM27X010 AM27X010-120JC AM27X010-120JI AM27X010-12 |
1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 250 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 90 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 55 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS ExpressROM Device 128K X 8 OTPROM, 120 ns, PDIP32 CABLE TIE BARB TY 120LB 18.1,1
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PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices] ADVANCED MICRO DEVICES INC
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M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
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STMicroelectronics ST Microelectronics, Inc.
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M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
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意法半导 STMicroelectronics ST Microelectronics
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AM29LV128ML103PCI AM29LV128MH103PCI AM29LV128MH/L |
Am29LV128MH/L - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 100 ns, PDSO56 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 8M X 16 FLASH 3V PROM, 110 ns, PBGA64 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit?3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
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Advanced Micro Devices, Inc.
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EN71NS032A0 EN71NS032A0-9DCWP EN71NS032A0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM
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Eon Silicon Solution Inc.
|
AT49BN1604 |
16-megabit Burst Mode 3-volt Only Flash Memory(16M3V猝发模式闪速存储器)
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Atmel Corp.
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